MOHANBABU A

Employment

• SRM University - Ramapuram Campus Assistant Professor
  2021 - Present
• Karpagam College of Engineering Assistant Professor
  2018 - 2020
• Council of Scientific and Industrial Research Senior Research Fellow (SRF)
  2017 - 2018
• SKP Engineering College Assistant Professor
  2013 - 2015

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (21)

• Performance Analysis of FinFET based Ternary Inverter
  2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) 2022 DOI: 10.1109/5nano53044.2022.9828879
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• A Design of Agricultural Greenhouse Monitoring System using Iot
  Turkish Journal of Computer and Mathematics Education 2021
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• Arduino Microcontroller Based Real-Time Air Pollution Monitoring System
  Turkish Journal of Computer and Mathematics Education 2021
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• Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
  Journal of Electronic Materials 2020 DOI: 10.1007/s11664-019-07731-4
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• Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small-signal model of quaternary AlInGaN HEMTs for microwave frequency applications
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2019 DOI: 10.1002/jnm.2609
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• Gsm based door lock system
  International Journal of Innovative Technology and Exploring Engineering 2019
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• Optimization of enhancement mode P-type Mg-doped In<inf>0.2</inf>Ga<inf>0.8</inf>N cap gate DH-HEMT for low-loss high power efficient boost converter circuits
  Materials Science in Semiconductor Processing 2019 DOI: 10.1016/j.mssp.2019.104624
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• Retinal microaneurysms detection using local convergence index features
  International Journal of Innovative Technology and Exploring Engineering 2019
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• Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit
  A. Mohanbabu, N. Mohankumar, D. Godwin Raj +2 more
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2018 DOI: 10.1002/jnm.2276
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• Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications
  International Journal of Electronics 2018 DOI: 10.1080/00207217.2017.1376354
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• Analysis of noise performance in InAs DG-MOSHEMT
  Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit, DevIC 2017 2017 DOI: 10.1109/DEVIC.2017.8074039
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• DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT
  Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit, DevIC 2017 2017 DOI: 10.1109/DEVIC.2017.8074042
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• Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices
  Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit, DevIC 2017 2017 DOI: 10.1109/DEVIC.2017.8074041
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• Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits
  A. Mohanbabu, N. Mohankumar, D. Godwin Raj +2 more
  Superlattices and Microstructures 2017 DOI: 10.1016/j.spmi.2017.01.043
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• FInvestigation of enhancement mode HfO<inf>2</inf> insulated N-polarity GaN/InN/GaN/In<inf>0.9</inf>Al<inf>0.1</inf>N heterostructure MISHEMT for high-frequency applications
  A. Mohanbabu, N. Mohankumar, D. Godwin Raj +1 more
  Physica E: Low-Dimensional Systems and Nanostructures 2017 DOI: 10.1016/j.physe.2017.05.005
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• In <inf>0.7</inf>Ga <inf>0.3</inf>As / InAs / In <inf>0.7</inf>Ga <inf>0.3</inf>As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
  Journal of Computational Electronics 2017 DOI: 10.1007/s10825-017-0991-x
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• Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)
  Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit, DevIC 2017 2017 DOI: 10.1109/DEVIC.2017.8074040
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• Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices
  Superlattices and Microstructures 2017 DOI: 10.1016/j.spmi.2017.10.020
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• Recessed Mg-doped P-Type In<inf>0.2</inf>Ga<inf>0.8</inf>N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications
  Proceedings of the International Conference on Inventive Computation Technologies, ICICT 2016 2017 DOI: 10.1109/INVENTIVE.2016.7823298
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• Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
  Solid-State Electronics 2014 DOI: 10.1016/j.sse.2013.09.009
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