Zijian Zhao

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Publications (38)

• 3-D Ferroelectric NAND In-Storage Processing Architecture for Mass Spectrometry
  IEEE Design & Test 2026 DOI: 10.1109/MDAT.2025.3596025
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• Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory
  Yi Xiao, Shan Deng, Zhouhang Jiang +13 more
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3564273
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• Elucidating the Role of Ferroelectric in Memory Window Expansion of Ferroelectric FETs With Gate-Side Injection
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3552013
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• Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate
  ACS Applied Materials & Interfaces 2024 DOI: 10.1021/acsami.4c08190
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• Deep random forest with ferroelectric analog content addressable memory
  Science Advances 2024 DOI: 10.1126/sciadv.adk8471
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• Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines
  Yixin Xu, Zijian Zhao, Yi Xiao +16 more
  Science Advances 2024 DOI: 10.1126/sciadv.adk1525
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• A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3477510
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• Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines
  Science Advances 2024
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• Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO2
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3418942
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• Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c07827
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• Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement
  IEEE Electron Device Letters 2023 DOI: 10.1109/LED.2023.3290940
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• A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance
  IEEE Electron Device Letters 2023 DOI: 10.1109/LED.2023.3274362
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• A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme with Disturb-Free Inference and High Endurance
  IEEE Electron Device Letters 2023
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• A Compact Ferroelectric 2T-(n+ 1) C Cell to Implement AND-OR Logic in Memory
  2023 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 2023
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• An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine
  Advanced Intelligent Systems 2023
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• CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays
  Scientific reports 2023
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• Comparative Advantages of 2T-nC FeRAM in Empowering High Density 3D Ferroelectric Capacitor Memory
  2023 International Electron Devices Meeting (IEDM) 2023 DOI: 10.1109/IEDM45741.2023.10413855
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• Embedding Security into Ferroelectric FET Array via In-Situ Memory Operation
  Nature Communications 2023 DOI: https://doi.org/10.1038/s41467-023-43941-5
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• In-Situ Encrypted NAND FeFET Array for Secure Storage and Compute-in-Memory
  2023 International Electron Devices Meeting (IEDM) 2023 DOI: 10.1109/IEDM45741.2023.10413774
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• Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
  ACS Applied Materials & Interfaces 2023
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