Kiran Sasikumar
Avant Garde Materials Simulation Deutschland GmbH, Argonne National Laboratory, Rensselaer Polytechnic Institute, National Institute of Technology, Advanced Cooling Technologies, Inc.
About
• Experienced in collaborative and independent research on heat transfer, thermodynamics, phase change, and reaction kinetics, with relevant applications in the fields of health, electronics, space and energy.
• Qualified mechanical engineer and materials scientist, with expertise in material interaction at nanoscale interfaces.
• 12+ years experience in programming with focus on computational techniques to simulate/characterize materials behavior.
• 9+ years experience in sifting through large text datasets (100 MB – 1 GB in size), extracting relevant information and presentation in human-readable form.
Employment
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Avant Garde Materials Simulation Deutschland GmbH2018 - Present
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Argonne National Laboratory Postdoctoral Researcher2015 - 2018
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Advanced Cooling Technologies, Inc. R&D Engineer - Intern2014 - 2015
Education
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Rensselaer Polytechnic Institute Ph.D2009 - 2014
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National Institute of Technology B.Tech.2005 - 2009
Projects & Funding
Projects & funding information is unavailable.
Publications (26)
- Graphene overcoats for ultra-high storage density magnetic media Save
- Slippery and Wear-Resistant Surfaces Enabled by Interface Engineered Graphene Save
- Teaching an Old Dog New Tricks: Machine Learning an Improved TIP3P Potential Model for Liquid–Vapor Phase Phenomena Save
- Machine Learning Applied to a Variable Charge Atomistic Model for Cu/Hf Binary Alloy Oxide Heterostructures Save
- Formation and Nature of Carbon-Containing Tribofilms Save
- Machine Learning Classical Interatomic Potentials for Molecular Dynamics from First-Principles Training Data Save
- Machine learning a bond order potential model to study thermal transport in WSe2 nanostructures Save
- Comparing optimization strategies for force field parameterization Save
- Active site localization of methane oxidation on Pt nanocrystals Save
- Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy Save