AG
Abhiram Gundimeda
Huawei Technologies Research & Development (UK) Ltd, National Physical Laboratory CSIR, University of Cambridge, Jawaharlal Nehru Technological University, Kakinada
Research areas: Physics and Astronomy · Condensed Matter Physics · GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Acoustic Wave Resonator Technologies
0000-0001-5208-1920
Employment
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Huawei Technologies Research & Development (UK) Ltd Epitaxy R&D Engineer2024 - Present
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National Physical Laboratory CSIR Senior Research Fellow2016 - 2018
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National Physical Laboratory CSIR Senior Project Fellow2015 - 2016
Education
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University of Cambridge PhD candidate2018 - Present
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Jawaharlal Nehru Technological University, Kakinada Bachelor of Technology (B.Tech)2009 - 2013
Projects & Funding
Projects & funding information is unavailable.
Publications (29)
- Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well Save
- Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well Save
- Enhanced Excitonic Nature of MAPbBr3 Nanocrystals in Nanoporous GaN Save
- Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons Save
- Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity Save
- MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1) Save
- Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy Save
- Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers Save
- Influence of current conduction paths and native defects on gas sensing properties of polar and non-polar GaN Save
- Influence of AlxGa1-xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) Save
- Unraveling the cause of degradation in Cu(In,Ga)Se 2 photovoltaics under potential induced degradation Save
- Photoluminescence efficiency of zincblende InGaN/GaN quantum wells Save
- Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer Save
- Magnetization and magnetoresistance of Ni/nanoporous-GaN composites Save
- Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector Save
- Enhanced near-infrared luminescence in zinc aluminate bestowed by fuel-blended combustion approach Save
- Defect induced broadband visible to near-infrared luminescence in ZnAl2O4 nanocrystals Save
- ZnO/GaN heterojunction based self-powered photodetectors: Influence of interfacial states on UV sensing Save
- Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors Save
- Influence of wet chemical etching on electronic structure and optical response of polar (0001) GaN films Save