Sanjay Kumar

Employment

• Indian Institute of Technology Patna Inspire Faculty
  2025 - Present
• Indian Institute of Technology Dhanbad Inspire Faculty
  2024 - 2025

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (43)

• Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware
  Advanced Science 2026 2 citations DOI: 10.1002/advs.74794
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• Symmetric Pulse-enabled Highly Linear Analog Switching in ALD-grown HfO2/Ta2O5-based Memristor for Multi-level Storage and Synaptic Applications
  2026 0 citations DOI: 10.36227/techrxiv.177078597.78852460/v1
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• Exploring Multilevel Current and Impedance Spectroscopy Analysis of Atomic Layer Deposited HfO2/Ta2O5 Memristive Devices
  IEEE Transactions on Electron Devices 2026 1 citation DOI: 10.1109/TED.2025.3635115
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• Two-dimensional layered materials-based energy-efficient optoelectronic memories: A leap towards bionic vision
  Materials Science and Engineering: R: Reports 2026 2 citations DOI: 10.1016/j.mser.2025.101146
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• Flexible-Compatible ZnO/rGO Heterostructure Ammonia Sensors with Schottky Barrier Modulation and Neural Network Prediction
  IEEE Journal on Flexible Electronics 2026 0 citations DOI: 10.1109/JFLEX.2026.3701325
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• Multilevel Analog Switching in HfO2/TiOx Flexible Memristor for Precision Neuromorphic Computing
  IEEE Transactions on Electron Devices 2026 0 citations DOI: 10.1109/TED.2026.3716988
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• MoS2:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing
  IEEE Electron Device Letters 2026 1 citation DOI: 10.1109/LED.2026.3699740
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• Electrical Analysis of Atomic Layer Deposited Thin HfO2 and HfO2/Ta2O5-Based Memristive Devices
  IEEE Transactions on Electron Devices 2025 17 citations DOI: 10.1109/TED.2025.3539256
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• Understanding the gas sensing mechanism of MoSe2 nanoroses and rGO composite-based chemiresistive sensors for room temperature NO2 detection
  Chemical Engineering Journal 2025 28 citations DOI: 10.1016/j.cej.2024.158178
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• Improved Performance of Yttrium Oxide-Based Memristor Through TiN Electrodes and Device Scaling for Neuromorphic and Pattern Recognition
  IEEE Transactions on Materials for Electron Devices 2025 8 citations DOI: 10.1109/TMAT.2025.3579714
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