Mandira Biswas

About

Mandira Biswas is a research scholar in the field of wide and ultra-wide bandgap semiconductor materials and devices, with a primary focus on power electronics, optoelectronic devices, and device–circuit co-design. Her research interests include β-Ga₂O₃-based power devices, Ohmic contact engineering, UV photodetectors, TCAD-based device modeling, and thin-film fabrication using RF magnetron sputtering. She has hands-on experience with Cadence Virtuoso, material characterization techniques (UV Visible, XRD, Raman, PL), and electrical probing systems.

She received her M.Tech degree in Electronics and Communication Engineering from Jadavpur University, Kolkata, India, in 2019. She is currently pursuing her Ph.D. in Electronics and Communication Engineering at the National Institute of Technology Meghalaya. Her work has resulted in multiple peer-reviewed journal publications in reputed international journals. Through her research, she aims to contribute to the development of next-generation high-power, high-frequency, and energy-efficient semiconductor technologies.

Employment

Employment history is unavailable.

Education

• National Institute of Technology Meghalaya PhD
  2022 - 2026
• Jadavpur University M.Tech
  ? - 2019

Projects & Funding

Projects & funding information is unavailable.

Publications (6)

• Simulation study of ohmic contact enhancement on Sn-doped $$\beta $$-Ga$$_2$$O$$_3$$ using Al-doped ZnO (AZO) interlayers
  Microsystem Technologies 2026 DOI: 10.1007/s00542-026-06116-y
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• Impact of thermal, optical, and trap effects on β-Ga2O3/ZnO heterojunction for RF applications
  Semiconductor Science and Technology 2026 DOI: 10.1088/1361-6641/ae41dd
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• β-Ga₂O₃ / p-Si (100) based vertical diode deposited using RF sputtering for rectifier design
  Micro and Nanostructures 2026 DOI: 10.1016/j.micrna.2025.208495
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• RF magnetron sputtering of Ga2O3 thin films: Analysis of thermal annealing induced tuning of structural, optical characteristics, and energy band alignments
  Materials Science in Semiconductor Processing 2024 DOI: 10.1016/j.mssp.2024.108243
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• RF magnetron sputtering of Ga2 O3 thin films: Analysis of oxygen flow rate impact on stoichiometry, structural, optical characteristics, and energy band alignments
  Materials Science in Semiconductor Processing 2024 DOI: 10.1016/j.mssp.2023.107937
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• Polyaniline Based Field Effect Transistor for Humidity Sensor
  Silicon 2022 DOI: 10.1007/s12633-021-01594-3
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