Hirak Kumar Chandra

Employment

• Krishnath College Assistant Professor
  2017 - Present
• Heritage Institute of Technology Assistant Professor
  2012 - 2017

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (9)

• Unveiling the potential of buckled V2S2 monolayer as an efficient anode material for CIBs: A DFT study
  Journal of Physics and Chemistry of Solids 2026 DOI: 10.1016/j.jpcs.2026.113849
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• Effect of biaxial strain and carrier doping on intrinsic valley polarization in 2H-RuCl2 Monolayer
  Journal of Magnetism and Magnetic Materials 2025 DOI: 10.1016/j.jmmm.2025.173478
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• Quantum spin Hall effect and emergence of conducting edge states in silicene supported by MX (M=Ga, In; X=S, Se, Te) monolayer
  Modern Physics Letters B 2024 DOI: 10.1142/S0217984924501963
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• Spin Hall conductivity of germanene supported by monolayer of different monochalcogenides and emergence of topologically insulating states
  Solid State Communications 2022 DOI: 10.1016/j.ssc.2022.114830
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• Quantum confinement: A route to enhance the Curie temperature of Mn doped GaAs
  Physical Review B 2017 DOI: 10.1103/physrevb.96.014430
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• Quantum anomalous Hall phase and half-metallic phase in ferromagnetic (111) bilayers of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>d</mml:mi></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w…
  Physical Review B 2017 DOI: 10.1103/physrevb.95.134448
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• Boron diffusion in MgO and emergence of magnetic ground states: A first-principles study
  Physical Review B 2014 DOI: 10.1103/physrevb.89.144412
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• Ferroelectric distortions in doped ferroelectrics: BaTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" disp…
  Physical Review B 2013 DOI: 10.1103/physrevb.87.214110
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• Defect induced local moment in ZnO as a consequence of Stoner mechanism
  Solid State Communications 2012 DOI: 10.1016/j.ssc.2012.01.050
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