Dr. Sandeep Moparthi

About

https://www.webofscience.com/wos/author/record/NPI-7104-2025

Employment

• Vellore Institute of Technology University Assistant Professor Senior Grade 1
  2022 - Present

Education

• National Institute of Technology Calicut Research Scholar
  2018 - 2022

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• Gate‐Induced Drain Leakage and Differential Resistance Optimization of Sub‐22‐nm Ferroelectric Negative Capacitance SOI FinFET Through Energy‐Band Tuning: Digital and Analog Performance Assessment
  physica status solidi (RRL) – Rapid Research Letters 2026 DOI: 10.1002/pssr.70245
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• Computational investigation of trapezoidal channel profiles in Gate-All-Around (GAA) FETs for digital performance
  Micro and Nanostructures 2026 DOI: 10.1016/j.micrna.2025.208523
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• Engineering the ferroelectric polarization to optimize the GIDL and negative output conductance in negative capacitance FET
  SCIENTIFIC REPORTS 2025 DOI: 10.1038/S41598-025-18041-7
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• Implementation and analysis of axon hillock neuron circuits using 28 nm FD-SOI MOSFET: original design and modifications
  ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING 2025 DOI: 10.1007/S10470-025-02464-3
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• TCAD-Augmented Machine Learning for the Prediction of Device Behaviour and Failure Analysis
  Advancing VLSI Through Machine Learning Innovations and Research Perspectives 2025 DOI: 10.1201/9781003483038-8
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• Negative capacitance silicon nanotube FET: a subthreshold modeling exploration of sub-60 mV/decade swing, negative drain-induced barrier lowering, and threshold voltage roll-off
  JOURNAL OF COMPUTATIONAL ELECTRONICS 2023 DOI: 10.1007/S10825-022-01986-7
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• Impact of Drain Voltage Coupling on Device and Circuit-Level Performance of Negative Capacitance Silicon Nanotube FET
  IEEE TRANSACTIONS ON NANOTECHNOLOGY 2022 DOI: 10.1109/TNANO.2022.3208208
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• Investigation of Subthreshold Characteristics of Negative Capacitance Single-Active Layer Double-Gate (NC-SALDG) Thin-Film Transistor (TFT)
  SILICON 2022 DOI: 10.1007/S12633-020-00932-1
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• Sensitivity Analysis of Silicon Nanotube FET (Si NTFET) with TCAD Assisted Machine Learning
  SILICON 2022 DOI: 10.1007/S12633-021-01546-X
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• Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable non-linear regression
  2021 4TH INTERNATIONAL SYMPOSIUM ON DEVICES, CIRCUITS AND SYSTEMS (ISDCS 2021) 2021 DOI: 10.1109/ISDCS52006.2021.9397911
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