Shankha Mukherjee

About

Shankha Mukherjee is currently pursuing a Ph.D. degree with KU Leuven in collaboration with imec, Leuven, Belgium. His research focuses on emerging ferroelectric memory devices. He completed an M.S. degree in microelectronics from IIT Madras, India, in 2021, where he studied current collapse in GaN-based HEMT devices. Shankha was awarded the university silver medal in 2018 for his B.Tech degree in Electronics & Communication Engineering from W.B.U.T., Kolkata, India.

Employment

• IMEC Researcher
  2025 - Present

Education

• KU Leuven PhD
  2021 - Present
• Imec PhD researcher in ferroelectric memory devices
  2021 - Present
• Indian Institute of Technology Madras M.S. (By Research)
  2018 - 2021

Projects & Funding

Projects & funding information is unavailable.

Publications (10)

• Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read
  IEEE Electron Device Letters 2025 DOI: 10.1109/LED.2025.3539834
  +Save
• Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO
  2024 IEEE International Electron Devices Meeting (IEDM) 2024 DOI: 10.1109/iedm50854.2024.10873459
  +Save
• Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor
  Solid-State Electronics 2024 DOI: 10.1016/j.sse.2023.108834
  +Save
• Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3418304
  +Save
• Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors
  2023 International Electron Devices Meeting (IEDM) 2023 DOI: 10.1109/iedm45741.2023.10413879
  +Save
• Capacitive Memory Window with Non-Destructive Read in Ferroelectric Capacitors
  IEEE Electron Device Letters 2023 DOI: 10.1109/led.2023.3278599
  +Save
• Optimization of C Doped Buffer Layer to Minimize Current Collapse in A1<inf>0.83</inf>I n<inf>0.17</inf>N/GaN HEMT by Studying Drain Lag Transients
  2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 2020 DOI: 10.1109/WiPDAAsia49671.2020.9360261
  +Save
• Comparative Study of Sextupole and Quadrupole Magnetic Field in an ECR-PE Sputtering System
  2019 3rd International Conference on Electronics, Materials Engineering and Nano-Technology, IEMENTech 2019 2019 DOI: 10.1109/IEMENTech48150.2019.8981042
  +Save
• A meticulous implementation of RSA Algorithm using MATLAB for image encryption
  2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology, IEMENTech 2017 2017 DOI: 10.1109/IEMENTECH.2017.8076979
  +Save
• Design of advanced digital heartbeat monitor using basic electronic components
  7th IEEE Annual Information Technology, Electronics and Mobile Communication Conference, IEEE IEMCON 2016 2016 DOI: 10.1109/IEMCON.2016.7746333
  +Save