Laeyong Jung

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Publications (11)

• Improved Ec control in Hf1−xZrxO2 FeNAND applications using SiO2 nanolaminate structure
  Applied Physics Letters 2026 DOI: 10.1063/5.0311032
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• Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer
  IEEE Electron Device Letters 2026 DOI: 10.1109/LED.2026.3702162
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• Enabling Memory Window in Ovonic Threshold Switch Devices Through Cu-Based Trap for Selector-Only Memory Operation
  IEEE Electron Device Letters 2025 DOI: 10.1109/LED.2025.3549369
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• Improved Memory Performance Through Integration of Ferroelectric and Ovonic Threshold Switching Layer
  IEEE Electron Device Letters 2025 DOI: 10.1109/LED.2024.3497957
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• Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy
  IEEE Electron Device Letters 2025 DOI: 10.1109/LED.2025.3580146
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• Tailoring Ferroelectric Performance and Domain Structure Ordering in HZO Capacitors via 2D-WS2 Multifunctional Layer
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3553822
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• Enhanced Memory Window and Excellent Endurance in FeFET With Ultrathin 2DEG Oxide Channel
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3441535
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• Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3360010
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• Variability and Reliability Study of Nano-Scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3354964
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• Enhancing Selector-Only Memory Reliability Through Multi-Step Write Pulse
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3483960
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