Jeevesh Kumar

Employment

• Indian Institute of Technology (Indian School of Mines), Dhanbad Assistant Professor
  2023 - Present
• Indian Institute of Science Research
  2016 - 2023

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (19)

• Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3591152
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• MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation
  ACS Nano 2024 DOI: 10.1021/acsnano.3c09428
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• Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering
  IEEE Journal of the Electron Devices Society 2024 DOI: 10.1109/JEDS.2023.3345020
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• Unveiling the Interfacial Behavior of Au Contacted MoS2 Atomristor and the Role of Point Defects
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3325800
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• Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal–TMDs’ Interface Chemistry
  ACS Omega 2023 DOI: 10.1021/acsomega.2c07489
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• Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices
  IEEE Electron Device Letters 2023 DOI: 10.1109/LED.2023.3250329
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• Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs
  IEEE Electron Device Letters 2022 DOI: 10.1109/LED.2022.3149410
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• First-Principles Molecular Dynamics Insight into the Atomic Level Degradation Pathway of Phosphorene
  ACS Omega 2022 DOI: 10.1021/acsomega.1c05353
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• Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3152459
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• Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3151033
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