Prasana Sahoo

About

Prasana Sahoo obtained his B.Sc degree in Physics with first class honors and distinction at Utkal University, India; and Master degree in Physcs from Sambalpur University, India, and was awarded university Gold medal as best student. In 2012/10, he was awarded Doctorate degree in Physics from Homi Bhabha National Institute (HBNI) in association with Indira Gandhi Center for Atomic Research. In recognition, he received Ten Year of Excellency- Outstanding PhD Thesis Award (2005-2015) from HBNI. Dr. Sahoo’s current research focuses on the exploration and understanding of exotic two-dimensional (2D) materials and their heterostructures which have both fundamental and wide range of technological implications in future optoelectronics such as LEDs, photovoltaics and sensors. His work has covered various areas of nanomaterials that including 2D materials and heterostructures (graphene and beyond), group III-V based semiconductor nanowires and sensors. He exploits a combination of materials synthesis, heterostructuring and device fabrication for physicochemical properties assessment. He is a pioneer in the invention of the one-pot and in-situ growth of multi-junction 2D lateral heterostructures and superlattices via water assisted CVD technique. For the last several years, he has focused on lateral and vertical heterostructures and tuning physical properties via doping and alloying to access already predictive exotic properties of 2D materials.

Employment

• Indian Institute of Technology Kharagpur Assistant Professor
  2019 - Present
• University of Cambridge Research Associate
  2018 - 2019
• University of South Florida Post Doc
  2016 - 2018
• Universidade Estadual de Campinas Post Doctorate
  2013 - 2015

Education

• Indira Gandhi Centre for Atomic Research PhD
  2007 - 2012
• Utkal University/ Banki College, Banki Bachelor of Science with Physics Honors
  2002 - 2005

Projects & Funding

Projects & funding information is unavailable.

Publications (54)

• CVD Grown 2D MoSe2 Semiconductor for Energy Harvesting Applications
  2026 DOI: 10.2139/ssrn.6874769
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• Strongly Bound Charge-Transfer Interface Excitons in Lateral Monolayer MoSe2–WSe2 Heterostructures
  Nano Letters 2026 DOI: 10.1021/acs.nanolett.5c06500
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• CVD-Grown 2D MoSe2 Nanolayers for Energy Storage
  ACS Applied Nano Materials 2025 DOI: 10.1021/acsanm.5c04291
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• Enhanced Light Emission in MoSe2–WSe2 Lateral Heterostructures in the Electron–Hole Plasma Regime
  The Journal of Physical Chemistry Letters 2025 DOI: 10.1021/acs.jpclett.5c02100
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• Multi-Moiré Networks in Engineered Lateral Hetero-Bilayers: Programmable Phononic Reconfiguration and Second Harmonic Generation
  2025 DOI: 10.21203/rs.3.rs-6546250/v1
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• Hyperspectral photoluminescence and reflectance microscopy of 2D materials
  Measurement Science and Technology 2024 DOI: 10.1088/1361-6501/ad128e
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• Probing Morphology-Dependent CdS/MoS2 Heterostructures for Photocatalytic and Light-Sensing Applications
  ACS Applied Nano Materials 2023 DOI: 10.1021/acsanm.3c04371
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• Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c06336
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• Laterally Grown Strain-Engineered Semitransparent Perovskite Solar Cells with 16.01% Efficiency
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.2c20124
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• Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices
  iScience 2022 DOI: 10.1016/j.isci.2022.103942
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