Ravi Tiwari

Employment

• IMEC R & D Engineer
  2023 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (17)

• A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3291333
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• Study of Trap Generation in NAND Flash Tunnel Oxide using TCAD
  2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2024 DOI: 10.1109/edtm58488.2024.10512333
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• A physics-based TCAD framework for NBTI
  Solid-State Electronics 2023 DOI: 10.1016/j.sse.2022.108573
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• Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/ted.2022.3143485
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• BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs
  Recent Advances in PMOS Negative Bias Temperature Instability 2022 DOI: 10.1007/978-981-16-6120-4_13
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• Using Long Short-Term Memory (LSTM) Network to Predict Negative-Bias Temperature Instability
  2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2021 DOI: 10.1109/sispad54002.2021.9592531
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• Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs
  2021 IEEE International Reliability Physics Symposium (IRPS) 2021 DOI: 10.1109/irps46558.2021.9405137
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• TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs
  2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2020 DOI: 10.23919/sispad49475.2020.9241687
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• TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain
  2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2019 DOI: 10.1109/sispad.2019.8870523
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• A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2019.2906339
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