Anil Lodhi

Employment

• Indian Institute of Technology Jodhpur Research Scholar
  2020 - Present

Education

• Indian Institute of Technology Jodhpur PhD
  2020 - 2026
• Indian Institute of Information Technology Design and Manufacturing Jabalpur: Jabalpur, Madhya Pradesh M.Tech. (Micro-Nano Electronics)
  2017 - 2019

Projects & Funding

Projects & funding information is unavailable.

Publications (25)

• Sustainable Flexible Organic Transistors on Paper Substrate: Performance and Long-Term Stability
  2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2026 DOI: 10.1109/edtm65772.2026.11496932
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• Demonstration of Polyvinylpyrrolidone as Sustainable Resistive Switching Material for Flexible Electronics
  2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2026 DOI: 10.1109/edtm65772.2026.11496982
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• Demonstration of synaptic behavior in flexible ReRAM devices with PVPy/TiOx bilayer for neuromorphic applications
  Journal of Physics D: Applied Physics 2025 DOI: 10.1088/1361-6463/ade88a
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• Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe2 Active Layer
  ACS Applied Electronic Materials 2024 DOI: 10.1021/acsaelm.4c01130
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• Flexible resistive memory device with egg-albumen/HfO x hybrid bilayer: fabrication and modeling of its switching variations
  Flexible and Printed Electronics 2024 DOI: 10.1088/2058-8585/ad39fa
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• Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3383408
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• Exploration of Chitosan as an Active Material in Eco-friendly ReRAM Devices
  2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) 2023 DOI: 10.1109/nmdc57951.2023.10343543
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• Radiation-Hardened ReRAM Devices for Flexible Electronics
  IEEE Journal on Flexible Electronics 2023 DOI: 10.1109/JFLEX.2023.3289481
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• Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices
  Memories - Materials, Devices, Circuits and Systems 2023 DOI: 10.1016/j.memori.2023.100029
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• Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2022.3221355
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