mohsin ganaie

About

I am Dr. Mohsin Ahmed Ganaie, a researcher and educator in the field of semiconductor physics and optoelectronic device fabrication. I completed my Ph.D. in Physics from Jamia Millia Islamia, New Delhi, India. My research journey has taken me from India to Italy, where I most recently worked as a Postdoctoral Fellow at the CNR Institute for Microelectronics and Microsystems, Catania, focusing on the fabrication of Germanium-based Single Photon Avalanche Detectors (Ge-SPADs).

My research interests include photodetectors fabrication, Silvaco TCAD Athena/Atlas simulation, mask designing using KLayout, solar cell fabrication, amorphous and dielectric chalcogenide semiconductor materials, and nano-materials synthesis. I have also worked on Organic-Metal Chalcogenide Semiconductor (MCS) composites for photovoltaic and optoelectronic applications.

I have published 17 journal articles, 6 conference papers, and 3 book chapters, and I have more than two years of university-level teaching experience. I am passionate about scientific research, innovation, and contributing to advanced technologies in photonics, photodetection, and semiconductor devices.

I am originally from Kishtwar, Jammu & Kashmir, India, and I value sincerity, hard work, and continuous learning. I am always open to collaboration, new opportunities, and meaningful academic and industrial partnerships.

Employment

• CNR IMM Postdoc
  2022 - 2024
• Indian Institute of Technology Delhi PostDoc Position
  2017 - 2020

Education

• jamia millia islamia ph.D
  2012 - Present

Projects & Funding

Projects & funding information is unavailable.

Publications (21)

• Chalcogenide materials and architectures: fundamental advances from quantum dots to bulk systems and multifunctional technologies
  Journal of Materials Science 2026 DOI: 10.1007/s10853-026-13254-1
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• Numerical investigation of Sn-based chalcogenide thin-film solar cells: dominant role of absorber thickness and contact engineering
  Journal of Materials Science: Materials in Energy 2026 DOI: 10.1007/s44308-026-00035-0
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• Dielectric investigation of In4Se96-xSx semiconductor: Relaxation and conduction mechanism
  Microelectronics Reliability 2021 DOI: 10.1016/j.microrel.2020.114018
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• Investigation on the morphological and optical properties of Selenium based thin films for photovoltaic application
  AIP Conference Proceedings 2020 DOI: 10.1063/5.0025689
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• Optical properties of solution phase deposited (As2S3)100-xGex chalcogenide thin films
  AIP Conference Proceedings 2017 DOI: 10.1063/1.4980448
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• Effect of sulfur on dielectric properties of Cd-Se Glassy system
  Journal of Materials Science-Materials in Electronics 2016 DOI: 10.1007/s10854-015-4118-5
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• Electrical transport mechanism in Cd5Se95-xZnx chalcogenide thin films
  Journal of Materials Science-Materials in Electronics 2016 DOI: 10.1007/s10854-015-3720-x
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• Optical and electrical properties of In4Se96-xSx chalcogenide thin films
  Journal of Alloys and Compounds 2016 DOI: 10.1016/j.jallcom.2016.06.078
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• Structural, electrical and dielectric properties of CNT doped SeTe glassy alloys
  Materials Chemistry and Physics 2016 DOI: 10.1016/j.matchemphys.2016.04.053
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• Synthesis and characterization of CdSe quantum dots dispersed in PVA matrix by chemical route
  AIP Conference Proceedings 2016 DOI: 10.1063/1.4947723
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