Sarang Ingole

Employment

• Indian Institute of Technology Kanpur Assistant Professor
  2010 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (24)

• Analysis of Si Back-Contact for Chalcogenide Perovskite Solar Cells Based on BaZrS3 Using SCAPS-1D
  Advanced Theory and Simulations 2023 DOI: 10.1002/adts.202200820
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• Enhancement of CZTS photovoltaic device performance with silicon at back-contact: A study using SCAPS-1D
  Solar Energy 2022 DOI: 10.1016/j.solener.2022.03.005
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• Enhancement of solution-processed Cu2ZnSnS4 film properties via a facile approach of sodium incorporation
  Materials Science in Semiconductor Processing 2022 DOI: 10.1016/j.mssp.2022.106660
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• Properties of Cu2ZnSnS4 films obtained by sulfurization under different sulfur-vapor pressures in a sealed ambient
  Solar Energy 2022 DOI: 10.1016/j.solener.2021.11.028
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• Reduction in Urbach energy and density of states for pyrite (FeS2) thin films: Healing of sulfur vacancies during hematite to pyrite transformation
  Journal of Physics and Chemistry of Solids 2022 DOI: 10.1016/j.jpcs.2022.110753
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• Optical phonons in pentanary compound (AgxCu1−x)2ZnSnS4 semiconductor: A raman study
  Journal of Alloys and Compounds 2021 DOI: 10.1016/j.jallcom.2020.158113
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• Scalable fabrication and electrical contact formation process for vertically oriented silicon nanopillars in trenches
  Materials Science in Semiconductor Processing 2021 DOI: 10.1016/j.mssp.2020.105470
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• An investigation on the phase purity of iron pyrite (FeS2) thin films obtained from the sulfurization of hematite (Fe2O3) thin films
  Materials Science in Semiconductor Processing 2020 DOI: 10.1016/j.mssp.2019.104775
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• Effect of cation ratios and monoethanolamine on the morphology of solution processed Cu 2 ZnSnS 4 films
  MRS Advances 2019 DOI: 10.1557/adv.2019.173
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• Evolution of the microstructural, electrical and optical characteristics of sol-gel derived Cu2ZnSnS4 thin films during sulfurization
  Materials Science in Semiconductor Processing 2019 DOI: 10.1016/j.mssp.2018.10.010
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