MG

Guziewicz

Łukasiewicz Research Network - Institute of Microelectronic and Photonics, Research Network Łukasiewicz - Institute of Electron Technology

Research areas: Materials Science · Electronic, Optical and Magnetic Materials · Semiconductor materials and interfaces · Silicon Carbide Semiconductor Technologies · GaN-based semiconductor devices and materials

ORCID iD 0000-0001-6904-7059
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About

The goal of my scientific and research activity is the development of technological processes for the production of new semiconductor devices.The beginning of this history was the supervision of the processes of film growth and deposition in the production of integrated silicon circuits in the TEWA semiconductor factory. At the beginning of my work at the Institute of Electron Technology (1990) I was familiarized with contact metallization problems for III-V semiconductor compounds (GaAs , InP , GaSb). In order to increase the reliability of ohmic contacts, I worked on a metallization system with diffusion barriers, and the optimization of their manufacturing processes was the subject of my PhD thesis. From the beginning of the applications of wide band gap semiconductor materials (produced using oxides and nitrides and SiC) in the semiconductor industry, with prospects of producing a new class of devices, working in the regime of the high current load and temperature regimes, I got involved in the research on (i) the formation of stable contact metallization, (ii) stress problems in structures based on GaN and in layers deposited on the semiconductor structures, (iii) problems of durability of metallization. I have developed a method for determining the stress in a multilayer system. Determination of the distribution of stresses in a multilayer structures was based on the analysis of strains of the crystal lattice determined from high resolution X-ray diffraction. Average thermal stress of a structure is determined based on the measurement of the deformation of the substrate as a function of the annealing temperature.
The second issue was creation of a stabile metallization system working at high temperature and current loads, both to GaN and to SiC substrates. Similar problems for ensuring durability of metallization of thermoelectric materials based on PbTe were solved using metallization systems composed of a contact layer based on silicides, a diffusion barrier and mounting layers from Au, Cu or Ag.
I rely on magnetron sputtering methods in manufacturing of metallic layers. The possibility of deposition at high temperatures enabled the development of epitaxial ultra-thin superconducting layers from Nb and NbTiN, which are characterized by exceptionally high critical current density. These layers were used in the construction of a superconducting single photon detector. In addition, NbN/NiCu thin film systems produced by magnetron sputtering are the subject of studies of superconductor-ferromagnetic interactions.
Another field of my interest is the wide energy gap semiconductor layers produced by magnetron sputtering and ALD. Within my one project I studied influence of high energy radiation on the physical parameters of the semiconductor NiO, ZnO and SnO2 layers. A monotonic increase in the resistivity of the p-NiO layers has been shown as a function of gamma and beta irradiation doses. p-NiO layers were also tested for sensitivity for hydrogen detection. Modification of the NiO surface by covering of palladium clusters allowed for the increase in detection sensitivity of hydrogen to the level below one in a million ratio in air.
My current research is still focused on metallization systems to AlGaN/GaN and SiC devices with high durability, including these based on copper alloy.

Employment

  • Łukasiewicz Research Network - Institute of Microelectronic and Photonics Research Staff
    2020 - Present
  • Research Network Łukasiewicz - Institute of Electron Technology Dr
    1990 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (9)