Santosh Kumar

About

I received my MSc degree in Physics from MDU Rohtak, India, in 2004, followed by an MTech in Materials Science and Engineering with a specialization in Semiconductors from Indian Institute of Technology Kharagpur, India, in 2007. I completed my PhD (Dr. rer. nat.) in 2013 at Leibniz-IFW Dresden and TU Chemnitz, Germany. I then joined the Quantum Photonics Laboratory at Heriot-Watt University, Edinburgh, UK, as a postdoctoral researcher, where I worked with Prof. Brian Gerardot until July 2018. I am currently a faculty member in the School of Physical Sciences at Indian Institute of Technology Goa (IIT Goa).

During my PhD, I investigated strain-tuning to achieve on-demand optical properties of GaAs/AlGaAs quantum dots (QDs) and performed in-situ laser processing of resonant tunnelling LED to fabricate arrays of nanoscale LEDs and electrically activate embedded InGaAs/GaAs QDs. As a postdoctoral researcher, I explored both fundamental and technological aspects of QD emitters in III-V semiconductors and 2D transition-metal dichalcogenides (TMDs).

At IIT Goa, my research group in the Solid-state Quantum Photonics (SQuP) Laboratory experimentally investigates light-matter interactions at the atomic and nanoscale, with the aim of advancing future quantum-photonic technologies.

Employment

• Indian Institute of Technology Goa Associate Professor
  2023 - Present
• Indian Institute of Technology Goa Assistant Professor
  2018 - 2023
• Heriot-Watt University Research Associate/ Post-doc
  2013 - 2018
• Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden eV Scientist/ Post-doc
  2013 - 2013
• Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden eV Scientist/ PhD
  2011 - 2013

Education

• Leibniz-IFW Dresden/Technische Universität Chemnitz Dr. rer. nat./ PhD
  2007 - 2013
• Indian Institute of Technology Kharagpur MTech
  2005 - 2007
• Maharshi Dayanand University MSc
  2002 - 2004

Projects & Funding

Projects & funding information is unavailable.

Publications (32)

• Distinct absolute bandgap deformation potentials of direct and indirect gaps in bilayer WSe2
  Applied Physics Letters 2026 DOI: 10.1063/5.0321694
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• Layered Semiconductors Integrated with Polyimide Thin Films for High‐Quality Valleytronic and Quantum‐Photonic Systems
  Advanced Materials Technologies 2025 DOI: 10.1002/admt.202500391
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• Large trion binding energy in monolayer WS2 via strain-enhanced electron–phonon coupling
  Communications Materials 2025 DOI: 10.1038/s43246-025-00809-z
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• Nanoparticle stressor-induced single-photon sources in monolayer WS2 emitting into a narrowband visible spectral range
  2D Materials 2024 DOI: 10.1088/2053-1583/ad4b38
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• Author Correction: Towards spontaneous parametric down conversion from monolayer MoS <inf>2</inf> (Scientific Reports, (2018), 8, 1, (3862), 10.1038/s41598-018-22270-4)
  Scientific Reports 2019 DOI: 10.1038/s41598-019-43801-7
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• Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
  Nature Nanotechnology 2019 DOI: 10.1038/s41565-019-0402-5
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• Charge-tunable quantum dots in monolayer WSe2
  Optics InfoBase Conference Papers 2018 DOI: 10.1364/FIO.2018.FW6C.2
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• Towards spontaneous parametric down conversion from monolayer MoS <inf>2</inf>
  Scientific Reports 2018 DOI: 10.1038/s41598-018-22270-4
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• Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
  Nature Communications 2017 DOI: 10.1038/ncomms15053
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• Nanoscale strain-engineering and optics of quantum emitters in a two-dimensional semiconductor
  Optics InfoBase Conference Papers 2017 DOI: 10.1364/CLEO_AT.2017.JM3E.6
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