Srikant Kumar Mohanty

Employment

• Amrita Viswa Vidyapeetham Researcher
  2025 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• Tuning the Electrocatalytic Performance of Cobalt Thin Films via Oxygen Annealing for Oxygen Evolution Reactions in Alkaline Media
  Catalysis Letters 2026 DOI: 10.1007/s10562-026-05398-1
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• Emulating Pain Perception Using a Cation Migration-Induced Threshold Switching Ag/TaOx/Pt Memristor
  2025 IEEE Pune Section International Conference (PuneCon) 2025 DOI: 10.1109/punecon67554.2025.11377537
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• Surface engineered Schottky contact for boosting performance parameters of Al-doped ZnON thin-film transistors
  Nanotechnology 2025 DOI: 10.1088/1361-6528/add413
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• Uniform resistive switching and highly stable synaptic characteristics of HfOx sandwiched TaOx-based memristor for neuromorphic system
  Ceramics International 2023 DOI: 10.1016/j.ceramint.2023.02.052
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• Controlling diffusion dynamics with electrode engineering for stable and reliable resistive switching in AlN/Ag-based CBRAM
  Materials Today: Proceedings 2023 DOI: 10.1016/j.matpr.2023.05.497
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• High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in-situ H2 plasma and neutral oxygen beam irradiation treatment.
  Nanotechnology 2023 DOI: 10.1088/1361-6528/acb5f9
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• Effect of oxygen concentration in ZnO-based transparent flexible memristor synapse
  Journal of Materials Science: Materials in Electronics 2023 DOI: 10.1007/s10854-023-10797-w
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• Investigation of Barrier Layer Effect on Switching Uniformity and Synaptic Plasticity of AlN Based Conductive Bridge Random Access Memory
  Electronics 2022 DOI: 10.3390/electronics11213432
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• Microwave and furnace annealing in oxygen ambient for performance enhancement of p-type SnO thin-film transistors
  Semiconductor Science and Technology 2021 DOI: 10.1088/1361-6641/ac363a
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• Interface Engineering for 3-Bit per Cell Multilevel Resistive Switching in AlN Based Memristor
  IEEE Electron Device Letters 2021 DOI: 10.1109/LED.2021.3125151
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