SK
Sandeep Kumar
National Institute of Information and Communications Technology, AGNIT Semiconductors, Indian Institute of Science, Indian Institute of Technology Kharagpur, Indian Institute of Technology Bombay
0000-0001-7253-646X
Employment
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National Institute of Information and Communications Technology Researcher2025 - Present
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AGNIT Semiconductors Sr. Device Process Engineer2023 - 2025
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National Institute of Information and Communications Technology2019 - 2023
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Indian Institute of Technology Bombay Compact Modeling of GaN HEMTs2015 - 2015
Education
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Indian Institute of Science PhD2015 - 2020
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Indian Institute of Technology Kharagpur M.Tech in Microelectronics and VLSI Design2012 - 2014
Projects & Funding
Projects & funding information is unavailable.
Publications (19)
- Ultrathin n-type doping in β-Ga2O3 using SiO2 solid dopant source Save
- Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates Save
- Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer Save
- Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate Save
- Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities Save
- A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias Save
- Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH > 5V and On‐Current > 0.5 A mm −1 Save
- Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors Save
- Optical Float-Zone Grown Bulk $\beta$ -Ga2O3-Based Linear MSM Array of UV-C Photodetectors Save
- Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model Save