Ahtisham Pampori

Employment

• University of California, Berkeley Postdoctoral Scholar
  2024 - Present
• University of California, Berkeley Research Engineer I
  2023 - 2024
• Indian Institute of Technology Kanpur Senior Project Associate
  2016 - 2017
• Frost and Sullivan Sdn. Bhd. Consulting Associate
  2015 - 2016

Education

• Indian Institute of Technology Kanpur Dual Degree (M.Tech | Ph.D.)
  2017 - 2024
• National Institute of Technology Srinagar B. Tech
  2011 - 2015

Projects & Funding

Projects & funding information is unavailable.

Publications (19)

• Impact Ionization in LDMOS Transistors: Improved Compact Model and Asymmetry Under Forward and Reverse Modes of Operation
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3529730
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• Exploring Switching Behavior of Dual-Gate RF GaN HEMTs: Characterization and Modeling
  IEEE Microwave and Wireless Technology Letters 2025 DOI: 10.1109/LMWT.2024.3507045
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• A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3487959
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• A Novel Neural Network-Based Transistor Compact Model Including Self-Heating
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3408151
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• GaN Transistor Modeling for RF and Power Electronics
  Elsevier 2024 DOI: 10.1016/c2021-0-00336-9
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• A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With OFF-State Harmonic Control
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3321015
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• Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability
  IEEE Access 2024 DOI: 10.1109/ACCESS.2024.3387108
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• Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3305328
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• A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2023.3298290
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• Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures
  IEEE Electron Device Letters 2023 DOI: 10.1109/LED.2023.3294552
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