Rajarshi Roy Chaudhuri

Employment

• TU Wien Post Doctoral Researcher
  2024 - 2026

Education

• Indian Institute of Science PhD
  2018 - 2024
• Indian Institute of Engineering Science and Technology MASTER OF TECHNOLOGY
  2016 - 2018
• Institute of Engineering and Management B.Tech
  2012 - 2016

Projects & Funding

Projects & funding information is unavailable.

Publications (29)

• Achieving Ultrahigh Threshold Voltage in Enhancement-Mode AlGaN/GaN HEMTs With an AlxTiyO/p-GaN Integrated Gate Stack—Part II
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3652534
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• Physical Insights Into Turn-On Mechanisms in p-GaN Gate AlGaN/GaN HEMTs—Part I
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3615921
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• Understanding the DC Reverse Bias Conduction and Breakdown Mechanism in β-Ga2O3 Schottky Barrier Diodes
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3566062
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• Unique Surface Passivation Stoichiometry Dependence of Dynamic On-Resistance and Its Suppression in p-GaN Gate AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3585910
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• Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3462375
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• Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3427097
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• Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3326111
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• Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3300652
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• Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3323439
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• Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3321281
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