Sujan Sarkar

Employment

Employment history is unavailable.

Education

• Indian Institute of Technology Madras Ph.D.
  2017 - Present
• Indian Institute of Technology Madras M.Tech.
  2015 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (10)

• Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN‐Based High Electron Mobility Transistors
  physica status solidi (a) 2023 DOI: 10.1002/pssa.202200490
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• An accurate method to extract thermal resistance of GaN-on-Si HEMTs
  Applied Physics Letters 2023 DOI: 10.1063/5.0141198
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• Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2023.3275277
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• Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2022.3224500
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• Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3181539
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• Effect of GaN cap layer on the performance of AlInN/GaN-based HEMTs
  Microelectronic Engineering 2022 DOI: 10.1016/j.mee.2022.111756
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• A Simple Technique to Estimate Surface Traps from DC Transfer Characteristics of GaN-Based HEMT
  2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 2021 DOI: 10.1109/bcicts50416.2021.9682496
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• Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor
  Journal of Applied Physics 2021 DOI: 10.1063/5.0066036
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• Gate Current Partitioning Model for Schottky Gate GaN HEMTs
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2020.3035552
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• Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.2988439
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