Giorgio Biasiol

About

Giorgio Biasiol received his B.S. degree in Physics at the University of Trieste, Italy in 1992, and his Ph.D. degree in Physics in 1998 at the Federal Institute of Technology, Lausanne, Switzerland.
In 1999 he joined the TASC-INFM Laboratory in Trieste, Italy (now IOM-CNR), as a development scientist. Senior development scientist since 2010, technology director since 2021. His activity is mainly focused on the epitaxial growth by MBE and characterization of high mobility GaAs- and InGaAs-based modulation doped devices, photonic structures and radiation detectors, and of InAs/GaAs site-controlled, self-assembled quantum nanostructures. He is co-author of around two hundred papers on international scientific journals. He has been responsible for several research projects, and co-organizer of the 18th European Molecular Beam Epitaxy Workshop in 2015. In 1998 he was awarded of the Young Author Best Paper Award at the 24th ICPS Conference.

Employment

• Consiglio Nazionale delle Ricerche Technology Director
  1999 - Present

Education

• École Polytechnique Fédérale de Lausanne Ph.D. in Physics
  1984 - 1998

Projects & Funding

Projects & funding information is unavailable.

Publications (301)

• Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains
  Photonics 2023 DOI: 10.3390/photonics10080933
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• Low intensity saturation of an ISB transition by a mid-IR quantum cascade laser
  Applied Physics Letters 2023 DOI: 10.1063/5.0153891
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• Bose-Einstein condensation of a two-magnon bound state in a spin-one triangular lattice
  arXiv 2023
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• Gigahertz modulation of a fully dielectric nonlocal metasurface
  arXiv 2023 DOI: 10.48550/arXiv.2308.16006
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• Implication of the double-gating mode in a hybrid photon counting detector for measurements of transient heat conduction in GaAs/AlAs superlattice structures
  Journal of Applied Crystallography 2023 DOI: 10.1107/S1600576723004302
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• Implication of the double-gating mode in hybrid photon counting detector for measurements of transient heat conduction in GaAs/AlAs superlattice structures
  ArXiv 2023
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• Implication of the double-gating mode in hybrid photon counting detector for measurements of transient heat conduction in GaAs/AlAs superlattice structures
  arXiv 2023 DOI: 10.48550/arXiv.2302.11972
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• Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect
  Physical Review B 2022 DOI: 10.1103/PhysRevB.106.235404
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• Metamaterial-enabled asymmetric negative refraction of GHz mechanical waves
  Nature Communications 2022 DOI: 10.1038/s41467-022-33652-8
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• Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure
  Sensors 2022 DOI: 10.3390/s22124598
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