Ajay Kumar

About

Dr. Ajay Kumar received the B.Tech. degree in Electronics and Communication from UPTU, Lucknow, India in 2009, M.Tech. degree in Nanoscience and Technology from Delhi Technological University, Delhi, India in 2014, and Ph.D. degree in Electrical Engineering Department, Delhi Technological University (Formerly Delhi College of Engineering), Delhi, India in 2019. He is currently an Associate Professor in Electronics and Communication Engineering Department in Jaypee Institute of Information Technology (JIIT), Noida. He has worked in Microelectronics Research Lab, Applied Physics Department, Delhi Technological University. He has authored or co-authored over 175 papers in various international and national journals and conferences. His research area is modeling and simulation of semiconductor devices at sub-20 nm scale. He received commendable research excellent award in 2018 and 2019 by DTU. Dr. Kumar is the Senior Member of IEEE, member Optical Society of America (OSA) and member other professional societies. He is reviewer of various IEEE Transactions, Elsevier, and IOP journals.

Employment

• Jaypee Institute of Information Technology Associate Professor
  2018 - Present
• Delhi Technological University JRF/Research Scholar
  2016 - 2018
• Delhi Technological University JRF
  2014 - 2016

Education

• Delhi Technological University Ph.D.
  2016 - 2019

Projects & Funding

Projects & funding information is unavailable.

Publications (95)

• Si1-xGex/InGaAs HJLTFET for low-power RF: concurrent improvements in speed, bandwidth, linearity, and switching delay
  Applied Physics A 2026 0 citations DOI: 10.1007/s00339-026-10033-2
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• Unveiling the impact of ITCs on High-k SOI GaN FinFET and its sensitivity analysis for improved reliability: a simulation study
  Analog Integrated Circuits and Signal Processing 2026 0 citations DOI: 10.1007/s10470-026-02617-y
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• Interface engineered CsSn0.5Ge0.5I3/c-Si lead free tandem solar cell achieving high efficiency using NiO/PCBM layers
  Discover Materials 2026 0 citations DOI: 10.1007/s43939-026-00740-1
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• Temperature influence on the electrical performance of symmetric high-k spacer underlap InGaAs nanotube field-effect transistor
  Results in Engineering 2026 0 citations DOI: 10.1016/j.rineng.2026.110376
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• Numerical optimization of chalcogenide perovskite solar cells using PEDOT PSS as hole transport layer through SCAPS 1D simulation
  Discover Applied Sciences 2026 0 citations DOI: 10.1007/s42452-026-08814-8
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• Development of Flexible and Biodegradable Paper-Based Wheatstone Bridge Strain Gauge for Low-Cost Sensing Applications
  IEEE Sensors Letters 2026 0 citations DOI: 10.1109/LSENS.2025.3647792
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• Advanced perspectives on chalcogenide perovskite solar cells using CZTS as HTL for optimum efficiency
  Journal of Physics and Chemistry of Solids 2026 DOI: 10.1016/j.jpcs.2025.113101
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• Numerical investigation of high-efficiency two-terminal Rb₁MAFA/In₂S₃ tandem perovskite solar cells
  Surfaces and Interfaces 2026 0 citations DOI: 10.1016/j.surfin.2026.110437
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• In₀.₅₃Ga₀.₄₇As-SOI-FinFET biosensor for ultra-sensitive point-of-care protein biomarker detection
  Discover Applied Sciences 2025 2 citations DOI: 10.1007/s42452-025-07953-8
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• HfO2/GaN interface traps reliability on nanoscaled truncated fin SOI-FinFET for high-frequency and low-distortion RF applications
  Micro and Nanostructures 2025 2 citations DOI: 10.1016/j.micrna.2025.208247
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