0000-0001-8092-4526 Employment
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Publications (14)
- Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO<inf>2</inf>/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices Save
- A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs Save
- Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study Save
- Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology Save
- Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics Save
- Dielectric properties of Si<inf>3-ξ</inf>Ge<inf>ξ</inf>N<inf>4</inf> and Si<inf>3-ξ</inf>C<inf>ξ</inf>N<inf>4</inf>: A density functional study Save
- Role of point defects and HfO<inf>2</inf>/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices Save
- Multisite interactions in lattice-gas models Save
- Role of codeposited impurities during growth. I. Explaining distinctive experimental morphology on Cu(0 0 1) Save
- Role of codeposited impurities during growth. II. Dependence of morphology on binding and barrier energies Save