Pullaiah Yerragudi

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Publications (5)

• Investigation of X-Ray Irradiance Hardness and High Temperature Operation of H-Terminated Diamond MOSFET
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2024.3514813
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• TCAD Analysis of O-Terminated Diamond m-i-p+ Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2021.3129726
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• Electrode Orientation Dependent Transition Metal—(MoS₂; WS₂) Contact Analysis for 2D Material Based FET Applications
  IEEE Electron Device Letters 2021 DOI: 10.1109/led.2021.3121810
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• Atomistic Modeling to Engineer Ohmic Contacts between Monolayer MoS2 and Transition Metals
  2020 IEEE International Interconnect Technology Conference (IITC) 2020 DOI: 10.1109/iitc47697.2020.9515662
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• Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET
  2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2020 DOI: 10.1109/edtm47692.2020.9117884
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