Nandita DasGupta

Employment

• IIT Madras

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (105)

• Experimental and Theoretical Investigation of Kink Behavior in C-Doped GaN-on-Si Power HEMTs Under Substrate Bias and Temperature Variations
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3669115
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• Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2025.3588675
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• Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN‐Based High Electron Mobility Transistors
  physica status solidi (a) 2023 DOI: 10.1002/pssa.202200490
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• An accurate method to extract thermal resistance of GaN-on-Si HEMTs
  Applied Physics Letters 2023 DOI: 10.1063/5.0141198
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• Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3240018
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• Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2023.3275277
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• Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2022.3224500
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• Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3181539
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• Comparison of shallow interface traps in AlGaN/GaN MIS-devices with three different gate dielectrics
  2016 3rd International Conference on Emerging Electronics, ICEE 2016 2017 DOI: 10.1109/ICEmElec.2016.8074570
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• Effect of annealing ambient on SnO<inf>2</inf>thin film transistors
  Applied Surface Science 2017 DOI: 10.1016/j.apsusc.2016.11.233
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