Samadrita Das

Employment

Employment history is unavailable.

Education

• Indian Institute of Technology Madras Post Doctoral Researcher
  2024 - Present
• National Institute of Technology Silchar PhD Scholar
  2020 - 2025

Projects & Funding

Projects & funding information is unavailable.

Publications (18)

• Deep-UV Nanowire LED with Step-Graded n-Type Electron Blocking Layer and AlO Nanoparticles for Enhanced Performance
  IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 2024 DOI: 10.1109/EDTM58488.2024.10511599
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• The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2024 DOI: 10.1002/jnm.3169
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• DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions
  IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 2024 DOI: 10.1109/EDTM58488.2024.10511356
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• III-Nitride Nanowire LEDs for Enhanced Light Technology
  2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023 2023 DOI: 10.1109/MIEL58498.2023.10315936
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• Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence
  Micromachines 2023 DOI: 10.3390/mi14101926
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• High-performance DUV AlGaN multi-quantum well LED with step-graded n-type AlInGaN electron blocking layer
  Journal of Optoelectronics and Advanced Materials 2023
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• EFFICIENCY AND RADIATIVE RECOMBINATION RATE ENHANCEMENT IN GAN/ALGAN MULTI-QUANTUM WELL-BASED ELECTRON BLOCKING LAYER FREE UV-LED FOR IMPROVED LUMINESCENCE
  Facta Universitatis, Series: Electronics and Energetics 2023 DOI: 10.2298/FUEE2301091D
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• Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency
  IECON Proceedings (Industrial Electronics Conference) 2023 DOI: 10.1109/IECON51785.2023.10312022
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• Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation
  Optical and Quantum Electronics 2023 DOI: 10.1007/s11082-022-04350-y
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• Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology
  Lecture Notes in Electrical Engineering 2023 DOI: 10.1007/978-981-19-2308-1_20
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