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Publications (12)
- Forming-free resistive switching in ferroelectric Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 film for RRAM application Save
- Electric Field-Modulated Charge Transfer in Geometrically Tailored MoX<inf>2</inf>/WX<inf>2</inf>(X = S, Se) Heterostructures Save
- Tunable multiferroic and forming-free bipolar resistive switching properties in multifunctional BiFeO<inf>3</inf> film by doping engineering Save
- Effects of magnetic field on resistive switching in multiferroic based Ag / BiFeO 3 / FTO RRAM device Save
- Evidence for dielectric suppression in non-magnetic modified multiferroic bismuth ferrite Save
- Investigation on the effect of Mn substitution on the structural, electrical and ferroelectric characteristics of Bi<inf>0.5</inf>Na<inf>0.5</inf>TiO<inf>3</inf> ceramic Save
- Magnetic properties and oxygen migration induced resistive switching effect in y substituted multiferroic bismuth ferrite Save
- Simultaneous improvement of piezoelectric and magnetic properties in diamagnetic ion modified BiFeO<inf>3</inf> film Save
- Correction to: Enhancing ferromagnetic properties in bismuth ferrites with non-magnetic Y and Sc co-doping (Journal of Materials Science: Materials in Electronics, (2018), 29, 6, (5150-5156), 10.1007/s10854-017-8479-9) Save
- Enhanced ferromagnetic properties in Nd and Gd co-doped BiFeO<inf>3</inf> ceramics Save