Srimanta Baishya

Employment

• National Institute of Technology Silchar Professor
  1991 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• Performance and Reliability Evaluation of Radiation hardened NanoSheet FET
  IEEE Transactions on Device and Materials Reliability 2026 DOI: 10.1109/TDMR.2026.3724258
  +Save
• Structural Optimization of a Junctionless VSTB FET to Improve its Electrical and Thermal Performance
  IEEE Transactions on Nanotechnology 2021 DOI: 10.1109/TNANO.2021.3119025
  +Save
• Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study
  IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 2020 DOI: 10.1109/TUFFC.2020.2999518
  +Save
• An Efficient Model of Nanoelectromechanical Systems Based Ultrasonic Sensor With Fringing Field Effects
  IEEE Sensors Journal 2020 DOI: 10.1109/JSEN.2019.2948795
  +Save
• Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET
  Micro & Nano Letters 2019 DOI: 10.1049/mnl.2018.5220
  +Save
• Deep insight into DC, RF/analog, and digital inverter performance due to variation in straggle parameter for gate modulated TFET
  Materials Science in Semiconductor Processing 2019 DOI: 10.1016/j.mssp.2018.11.011
  +Save
• Effect of gate dielectric on electrical parameters due to metal gate WFV in n‐channel Si step FinFET
  Micro & Nano Letters 2018 DOI: 10.1049/mnl.2018.0189
  +Save
• Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET
  Microelectronics Journal 2018 DOI: 10.1016/j.mejo.2018.04.005
  +Save
• Analysis of GaN nanoscale FinFET for low power circuit applications
  Micro & Nano Letters 2018 DOI: 10.1049/mnl.2017.0795
  +Save
• Controlling fixed trap charge effect in FinFET using heterodielectric BOX
  Electronics Letters 2018 DOI: 10.1049/el.2017.3803
  +Save