Zhao Xiaofan

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Publications (12)

• Highly Uniform Pyrene-Based Host–Guest-Doped Organic Thin Films with Ultralow ASE Threshold and High Stability
  Langmuir 2026 DOI: 10.1021/acs.langmuir.5c06289
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• Low amplified spontaneous emission threshold coupled with efficient electroluminescence from a solution-processable bis-stilbene-derived dye
  Organic Electronics 2024 DOI: 10.1016/j.orgel.2024.107141
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• Lead-free Cs3Cu2I5 perovskite vertical cavity surface emitting lasers with low threshold
  Journal of Luminescence 2023 DOI: 10.1016/j.jlumin.2022.119434
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• 1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy
  Thin Solid Films 2020 DOI: 10.1016/j.tsf.2020.138237
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• Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure
  Semiconductors 2020 DOI: 10.1134/s1063782620050103
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• Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell
  Solar Energy Materials and Solar Cells 2020 DOI: 10.1016/j.solmat.2019.110339
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• 150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures
  Optical Materials 2019 DOI: 10.1016/j.optmat.2019.109375
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• Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
  AIP Advances 2019 DOI: 10.1063/1.5094472
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• Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
  Japanese Journal of Applied Physics 2019 DOI: 10.7567/1347-4065/aafd19
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• Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell
  AIP Advances 2018 DOI: 10.1063/1.5049367
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