Subindu Kumar

Employment

• Indian Institute of Technology (ISM), Dhanbad Professor
  2009 - Present
• Siliguri Institute of Technology, Techno India Group Full-Time Faculty
  2001 - 2009

Education

• Institute of Radio Physics and Electronics, University of Calcutta Ph. D (Tech)
  2005 - 2009
• Institute of Radio Physics and Electronics, University of Calcutta M. Tech
  1999 - 2001
• Guru Ghasidas Vishwavidyalaya M. Sc (Electronics)
  1997 - 1999
• R. K. Mission Residential College, Narendrapur, University of Calcutta B. Sc (Physics Hons.)
  1994 - 1997

Projects & Funding

Projects & funding information is unavailable.

Publications (52)

• Low-Energy Room-Temperature Ni-Functionalized ZnO–TiO2 Ternary Nanocomposite Thin-Film Transistor Formaldehyde Sensor
  IEEE Sensors Journal 2026 DOI: 10.1109/JSEN.2026.3681895
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• Interdiffusion induced changes in the absorption spectra of III-V quantum dot systems
  Optik 2025 DOI: 10.1016/j.ijleo.2024.172159
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• Heavy ions and alpha particles irradiation impact on III-V broken-gap gate-all-around TFET
  Microelectronics Reliability 2024 DOI: 10.1016/j.microrel.2024.115426
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• Proposal for variability-induced effective radius of elliptical gate-all-around junctionless transistors and its applicability in hydrogen gas sensors
  AEU - International Journal of Electronics and Communications 2024 DOI: 10.1016/j.aeue.2024.155337
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• Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs
  Micro and Nanostructures 2024 DOI: 10.1016/j.micrna.2024.207875
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• Assessment of Negative Bias Temperature Instability Due to Interface and Oxide Trapped Charges in Gate-All-Around TFET Devices
  IEEE Transactions on Nanotechnology 2023 DOI: 10.1109/TNANO.2023.3255012
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• Assessment of interface trapped charge induced threshold voltage hysteresis effect in gate-all-around TFET
  Micro and Nanostructures 2023 DOI: 10.1016/j.micrna.2022.207502
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• Gaussian doping profile in the channel region: A technology booster for junctionless transistors
  AEU - International Journal of Electronics and Communications 2023 DOI: 10.1016/j.aeue.2023.154749
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• Impact of Barrier on the Absorption Spectra of Size Distributed III-V Quantum Dot Systems
  2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 2023 DOI: 10.1109/WRAP59682.2023.10712984
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• Impact of hole trap-detrap mechanism on X-ray irradiation induced threshold voltage shift of radiation-hardened GAA TFET device
  Microelectronics Reliability 2023 DOI: 10.1016/j.microrel.2023.114980
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