Deepjyoti Deb

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Publications (7)

• Interface Segmentation Approach (InSeAp) on TCAD for Statistical Analysis of Interface Trap Spatial Variations in TFETs
  IEEE Access 2026 DOI: 10.1109/ACCESS.2026.3654230
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• Scaling-induced noise behavior in n-p-n SOI double-gate tunnel FETs in presence of interface traps
  Physica Scripta 2025 DOI: 10.1088/1402-4896/adf779
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• Random Telegraph Noise Due to Dielectric-Semiconductor Interface Traps in MOS Transistors
  IEEE Transactions on Dielectrics and Electrical Insulation 2025 DOI: 10.1109/TDEI.2024.3491672
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• Parametric investigation and trap sensitivity of n-p-n double gate TFETs
  Computers and Electrical Engineering 2022 DOI: 10.1016/j.compeleceng.2022.107930
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• Role of gate electrode in influencing interface trap sensitivity in SOI tunnel FETs
  Journal of Micromechanics and Microengineering 2022 DOI: 10.1088/1361-6439/ac56e8
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• Model for Predicting the Threshold Voltage of Tunnel Field-Effect Transistors Using Linear Regression
  Journal of Electronic Materials 2021 DOI: 10.1007/s11664-021-09189-9
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• An SOI n-p-n Double Gate TFET for Low Power Applications
  2021 Devices for Integrated Circuit (DevIC) 2021 DOI: 10.1109/devic50843.2021.9455827
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