Dinakar

About

Brief Profile:
Dr. Dinakar Kanjilal is a versatile Scientist having excellent expertise in experimental research in the field of Condensed Matter Physics, Materials Science and Accelerator Physics. After completion of his PhD and PDF from IIT Kanpur. He has been involved in the development of various world class Accelerators and associated Experimental Research Activities at Inter-University Accelerator Centre (IUAC) from the beginning in 1985 for carrying out internationally competitive research in front-ranking areas in the country by hundreds of users' groups from all over India and abroad for more than three decades.
More than a dozen researchers completed their PhD degrees under his supervision at IUAC. He has been mentoring/supervising research activities of a large number of Post-Doctoral Fellows, Inspire Faculty Fellows and other young researchers. He has more than 400 research publications in international SCI journals.
He has been serving in various Scientific Bodies/Committees at national level e.g., President of Indian Physics Association (IPA), Chairman of the Project Review and Monitoring Committee (PRMC) of ‘Indian Science Technology and Engineering (I-STEM)’, Chairman of the India-CERN Task Force, Chairman of SERB Program Advisory Committee on Physical Sciences, Chairman of BRNS Mega Science Scheme, Member of the DAE-DST Co-ordination Committee, Member of the Board of Research in Nuclear Sciences (BRNS) etc.
Dr. Kanjilal is the Fellow of both the Indian National Science Academy (INSA) and the National Academy of Sciences India (NASI).
Address for Correspondence:
Dr. Dinakar Kanjilal, FNA, FNASc.
Former Director & DAE Raja Ramanna Fellow,
Inter-University Accelerator Centre (IUAC),
Aruna Asaf Ali Marg,
New Delhi 110067

Employment

• Inter-University Accelerator Centre Former Director & DAE Raja Ramanna Fellow
  1985 - Present

Education

• Indian Institute of Technology Kanpur PhD
  1978 - 1985

Projects & Funding

Projects & funding information is unavailable.

Publications (597)

• Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC
  Journal of Applied Physics 2024 DOI: 10.1063/5.0205284
  +Save
• Room temperature fabrication of poly-crystalline Si thin films via Al-induced crystallization under 500 keV Xe+ ion irradiation
  Journal of Applied Physics 2022 DOI: 10.1063/5.0099262
  +Save
• Disorder-induced crossover of Mott insulator to weak Anderson localized regime in an argon-irradiated NdNiO3 film
  Physical Review B 2022 DOI: 10.1103/PhysRevB.105.205120
  +Save
• Thickness effect on scaling law and surface properties of nano-dimensional SnTe thin films
  Journal of Applied Physics 2021 DOI: 10.1063/5.0066006
  +Save
• Controlled generation of photoemissive defects in 4H-SiC using swift heavy ion irradiation
  Journal of Applied Physics 2021 DOI: 10.1063/5.0051328
  +Save
• Design and development of a compact ion implanter and plasma diagnosis facility based on a 2.45 GHz microwave ion source
  Review of Scientific Instruments 2021 DOI: 10.1063/5.0029629
  +Save
• Influence of fractal and multifractal morphology on the wettability and reflectivity of crystalline-Si thin film surfaces as photon absorber layers for solar cell
  Journal of Applied Physics 2021 DOI: 10.1063/5.0023474
  +Save
• Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
  Applied Physics Letters 2020 DOI: 10.1063/5.0024944
  +Save
• Apparatus for Seebeck coefficient measurement of wire, thin film, and bulk materials in the wide temperature range (80–650 K)
  Review of Scientific Instruments 2019 DOI: 10.1063/1.5116186
  +Save
• A fast response, low heat generating activation method for LHe level sensors
  Review of Scientific Instruments 2018 DOI: 10.1063/1.5027300
  +Save