Saddam Husain

About

Electrical Engineer with experience in RF/microwave devices modeling and simulation, and machine learning-based modeling and optimization. Recently, I received a Ph.D. degree from Nazarbayev University, Kazakhstan, under the supervision of Prof. Mohammad Hashmi (Senior Member, IEEE), Dr. Galymzhan Nauryzbayev (Senior Member, IEEE), and Prof. Fadhel M. Ghannouchi (Fellow, IEEE).

Employment

• Nazarbayev University Working at Nazarbayev University.
  2020 - Present
• University of Sharjah IAESTE Research Intern
  2020 - 2020
• Indraprastha Institute of Information Technology Delhi Research Intern
  2019 - 2019

Education

• Nazarbayev University Ph.D.
  2020 - 2024

Projects & Funding

Projects & funding information is unavailable.

Publications (23)

• An Accurate and Reliable Behavioral Modeling Technique for Fully Printed Vanadium Dioxide RF Switches Using Model Ensembling Approach
  IEEE Access 2025 DOI: 10.1109/ACCESS.2025.3591890
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• Hybrid Approach for Performance Optimization of Gallium Nitride High Electron Mobility Transistors Small-Signal Behavioral Models
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2025 DOI: 10.1002/JNM.70130
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• Optimized Machine Learning-Augmented Hybrid Empirical Models for AlGaN/GaN HEMTs: A Comprehensive Analysis
  IEEE Access 2025 DOI: 10.1109/ACCESS.2025.3594339
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• Accurate and Efficient Behavioral Modeling of GaN HEMTs Using An Optimized Light Gradient Boosting Machine
  Advanced Theory and Simulations 2025 DOI: 10.1002/adts.202401565
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• Combining Intelligence With Rules for Device Modeling: Approximating the Behavior of AlGaN/GaN HEMTs Using a Hybrid Neural Network and Fuzzy Logic Inference System
  IEEE Journal of the Electron Devices Society 2024 DOI: 10.1109/JEDS.2024.3461169
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• Development and Assessment of ML Based GaN HEMTs Small-Signal Modelling Techniques
  Proceedings of the International Conference on Microelectronics (ICM) 2024 DOI: 10.1109/ICM63406.2024.10815924
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• Development and Evaluation of ANN, RBNNs, and GRNNs Based Small-Signal Behavioral Models for GaN HEMT Up to 40 GHz
  Proceedings of the IEEE International Midwest Symposium on Circuits and Systems 2024 DOI: 10.1109/MWSCAS60917.2024.10658824
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• Ensemble Learning-Based Small-Signal Intrinsic Parameter Extraction Model for GaN HEMTs
  Proceedings of the International Conference on Microelectronics (ICM) 2024 DOI: 10.1109/ICM63406.2024.10815873
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• Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs
  IEEE Access 2023 DOI: 10.1109/ACCESS.2023.3317530
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• Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2023.3324084
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