Asifa Amin

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Publications (7)

• A Review of TDDB Reliability in 45-nm PDSOI FETs: Effects of Cryogenic Operation, AC Stress, and Layout Variations
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3700143
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• Effect of Layout on TDDB in 45-nm PDSOI N-Channel FETs Under DC and AC Stress
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2024.3524877
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• AC-TDDB Behavior in 45 nm PDSOI Ultra-Thin Gate Oxide FETs Using SILC Spectroscopy
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3456780
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• Investigation and Subcircuit Modeling of Self-Heating in PDSOI NFETs at Cryogenic Temperatures Using Pulsed I – V Technique for Co-Integrated Quantum Technologies
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3435812
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• Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures
  Solid-State Electronics 2024 DOI: 10.1016/j.sse.2023.108820
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• Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications
  IEEE Transactions on Device and Materials Reliability 2023 DOI: 10.1109/TDMR.2023.3312735
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• High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3295766
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