Mohammad Sajid Nazir

Employment

Employment history is unavailable.

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• An Analytical Modeling Framework for Ferroelectric-Gate GaN HEMTs With MFIS Gate-Stack
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3714747
  +Save
• Exploring Switching Behavior of Dual-Gate RF GaN HEMTs: Characterization and Modeling
  IEEE Microwave and Wireless Technology Letters 2025 DOI: 10.1109/LMWT.2024.3507045
  +Save
• A Compact Model for Polarization-Graded HEMTs Demonstrating Enhanced Linearity
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3592176
  +Save
• A SPICE-Compatible Compact Model of Ferroelectric Diode
  IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2025 DOI: 10.1109/JXCDC.2025.3624212
  +Save
• A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3487959
  +Save
• Enhancing the Capabilities of Quantum Transport Simulations Utilizing Machine Learning Strategies
  2024 DOI: 10.1145/3670474.3685943
  +Save
• A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With OFF-State Harmonic Control
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3321015
  +Save
• A Unified Charge-Based SPICE-Compatible Flicker Noise Model for 2-D Material FETs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3446766
  +Save
• Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability
  IEEE Access 2024 DOI: 10.1109/ACCESS.2024.3387108
  +Save
• Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures
  IEEE Electron Device Letters 2023 DOI: 10.1109/LED.2023.3294552
  +Save