Dushyant Singh
Also known as: Dushyanth Singh
Indian Institute of Technology Gandhinagar, National Institute of Science Education and Research, Indian Institute of Technology Bombay, University of Allahabad, C.A.V. Intercollege, Allahabad
0000-0002-0386-1573
About
Dr. Dushyant Singh obtained his Ph.D. degree in Physics from the department of physics, Indian Institute of Technology Bombay, Mumbai, India. He received M.Sc. degree in Physics (specialization: condensed matter physics) from IIT Bombay, India. Currently, his research interest is in nanoscale magnetism, spintronics, Schottky devices, magnetic tunnel junctions, Skyrmions in Magnetic Multilayers, magnetic sensors, and Fabrication of Single Crystal and Thin Films and their magnetic and magnetotransport properties.
Employment
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Indian Institute of Technology Gandhinagar Post Doctoral Fellow2023 - Present
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National Institute of Science Education and Research Post Doctoral Fellow2022 - 2023
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Indian Institute of Technology Bombay Doctor of Philosophy2013 - 2020
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Indian Institute of Technology Bombay Master of Science2011 - 2013
Education
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Indian Institute of Technology Bombay Ph.D.2013 - 2020
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Indian Institute of Technology Bombay Master of Science2011 - 2013
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University of Allahabad Bachelor of Science2008 - 2011
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C.A.V. Intercollege, Allahabad SSC2006 - 2008
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C.A.V. Intercollege, Allahabad HSC2004 - 2006
Projects & Funding
Projects & funding information is unavailable.
Publications (17)
- Octahedral tilt–driven anisotropy and wasp-waisted hysteresis in canted antiferromagnetic LaFe(1-x)NixO3 Save
- Self-assembled straw-bundle-like CsPbI3 microstructure by TPPi assisted growth Save
- Explicit lattice parameter determination and Raman study of GeSn-epilayers on Ge/Gd2O3/Si(111) substrates Save
- Tailoring nanocrystallite ZnS through Fe doping Save
- Evolution of structurally induced magnetic and optical properties of Co-doped ZnS nanoparticles Save
- Viable scaling mechanism ensuing anomalous Hall effect in Si/Ni multilayers from 2 K-300 K Save
- Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy Save
- Temperature-Dependent Raman Spectroscopy Analysis of Epitaxially Grown Ge0.91Sn0.09 on GaAs (001) Substrate Save
- Skew scattering dominated anomalous Hall effect in Si/Ni multilayers containing varying number of bilayers Save
- Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy Save