Tarun Sharma
Also known as: Tarun Kumar Sharma
Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Devi Ahilya Vishwavidyalaya
0000-0002-0418-9491
About
Tarun Kumar Sharma
Prof. HBNI, Mumbai & Head, MSS, RRCAT, Indore
Tarun's primary research interests lie in the area of semiconductor physics with a particular onus on optimising the performance of semiconductor devices like laser diodes, LEDs, PIN Photodiodes, Schottky didoes, HEMT, sensors and solar cells. He has produced >200 journal papers and conference proceedings in this area including a few invited papers. He has been working on the epitaxial growth of quantum structures using MOVPE & MBE and subsequent characterization using spectroscopic, x-ray and electrical probes. Recent topics include:
* GaN based HEMT devices
* AlGaN/GaN heterostructures for deep UV emitters and detectors.
* Nitride laser diodes/LEDs
* MOVPE & MBE growth of Nitride Semiconductors
* Semiconductor Quantum structures (wells and dots) for device applications
* MOVPE growth of conventional III-V semiconductors (Quantum wells/wires/dots)
* Spin-photonics applications
Tarun's specialties: Prof. Tarun Sharma is a semiconductor physicist. He has about 25 years of research experience in conventional arsenides/phosphides,antimonides,ZnO/MgZnO and Nitrides etc. He has mastered the art of high quality epitaxial growth that has enabled him to observe several important physical phenomenon in semiconductor quantum structures.
Tarun's students are trained in the following areas:
* Epitaxial growth of Semiconductor heterostructures including Quantum wells, wires and dots.
* Spectroscopic characterization of epitaxial layers (PL/PLE/PR/CER/SPS/FTIR-SPS)
* Electronic transport characterization of epitaxial layers (Hall, IV, CV, ECV, DLTS)
* HRXRD characterization of epitaxial layers (data acquision and simulation)
* Device Fabrication (Photolithography, Metallization by e-beam and thermal, Dielectric coating by PECVD and sputtering, Dry and wet etching, Wire and Die bonding, Scribing, Device testing)
Epitaxial growth and Device fabrication are carried out under class 100/1000/10000 clean room conditions. Students are trained to work in semiconductor clean rooms.
Employment
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Homi Bhabha National Institute Professor2010 - Present
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Raja Ramanna Centre for Advanced Technology Head, MSS1995 - Present
Education
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Devi Ahilya Vishwavidyalaya PhD Physics
Projects & Funding
Projects & funding information is unavailable.
Publications (21)
- Full-zone optical spin injection in AlxGa1−xAs alloys Save
- Contribution of inter-valley scattering in governing the steady state optical spin orientation in Al x Ga1−x As Save
- Signature of linear-in- k Dresselhaus splitting in the spin relaxation of X -valley electrons in indirect band gap AlGaAs Save
- Prediction of inverse spin Hall devices based on the direct injection of carriers in L-valley of GaAs Save
- Filtering noise in time and frequency domain for ultrafast pump–probe performed using low repetition rate lasers Save
- Anisotropic magnetic properties of excitons in GaAs multiple quantum wells Save
- Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs Save
- Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations Save
- Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy Save
- Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors Save