Balamurugan N B

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Publications (111)

• 2D analytical modeling and simulation of dual material DG MOSFET for biosensing application
  AEU - International Journal of Electronics and Communications 2019 DOI: 10.1016/j.aeue.2018.11.039
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• A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications
  AEU - International Journal of Electronics and Communications 2019 DOI: 10.1016/j.aeue.2019.02.016
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• An Analytical Modeling and Simulation of Surrounding Gate TFET with an Impact of Dual Material Gate and Stacked Oxide for Low Power Applications
  Journal of Nano Research 2019
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• Impact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs
  Materials Science in Semiconductor Processing 2019 DOI: 10.1016/j.mssp.2019.104653
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• Influence of Temperature in Scattered SiNW MOSFET
  Proceedings of the National Academy of Sciences India Section A - Physical Sciences 2019 DOI: 10.1007/s40010-017-0385-2
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• Modeling and simulation of dual-material-gate AlGaN/GaN high-electron-mobility transistor using finite difference method
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2019 DOI: 10.1002/jnm.2546
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• New dual material double gate junctionless tunnel FET: Subthreshold modeling and simulation
  AEU - International Journal of Electronics and Communications 2019 DOI: 10.1016/j.aeue.2018.11.037
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• New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
  Superlattices and Microstructures 2019 DOI: 10.1016/j.spmi.2019.05.016
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• Preface
  Communications in Computer and Information Science 2019
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• Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications
  Journal of Electronic Materials 2019 DOI: 10.1007/s11664-019-07492-0
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