0000-0002-0613-1090 Employment
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Publications (15)
- “Design and simulation of a monolithic HfO2-based on-chip thermally stimulated current dosimeter for CMOS radiation reliability applications” Save
- Linearity and Noise Evaluation Compound Semiconductor-Based Highly Sensitive Junctionless Gate-All-Around FET Biosensor Save
- Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel Save
- DESIGN AND ANALYSIS OF TRI-LAYERED STRAINED CHANNEL DG SHOI FET AT 14 NM Save
- Modelling and Implementation of Double Gate n-channel FET with Strain Engineered Tri-Layered Channel System for Enriched Drain Current,Моделювання та реалізація n-канального польового транзистора з подвійним затвором та тришаровою системою каналів із спр… Save
- Development and characterization of nano material membrane device for enhanced transmittance Save
- Estimation and analysis for modelling of stand-alone graphene/AlGaAs/GaAs schottky solar photovoltaic cell module for power conversion efficiency Save
- Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs Save
- Performance analysis and development of strain induced quantum well based nano-system device technology Save
- Physics and Modelling of Tri-Layered Strained Channel for Development of Double Gate n-channel FET Save