D.Somvanshi

Employment

• Harcourt Butler Technical University Assistant Professor
  2022 - Present
• Jadavpur University DST-INSPIRE Faculty
  2020 - 2022
• Technion Israel Institute of Technology Post-Doc Researcher
  2019 - 2020
• Jadavpur University DST-INSPIRE Faculty
  2017 - 2019
• Georgia State University Post Doc Researcher
  2016 - 2017
• Indian Institute of Science PostDoc
  2015 - 2016

Education

• Indian Institute of Technology Banaras Hindu University PHD
  2010 - 2015

Projects & Funding

Projects & funding information is unavailable.

Publications (30)

• Defect‑mediated electronic structure, optical properties, and ion migration in novel LiInP2X6 (X = S, Se) monolayers
  2026 DOI: 10.2139/ssrn.7078658
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• Layer thickness-dependent dopant stability and electronic structure of 3d, 4d and 5d transition metal-doped p-type WSe₂
  2026 DOI: 10.2139/ssrn.7073937
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• Controlling dopability in transition-metal-doped WSe2 monolayer via strain engineering
  Physica B: Condensed Matter 2026 DOI: 10.1016/j.physb.2026.418922
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• p-WSe2 Nanosheets/ n-WS2 Quantum Dots/p-Si (2D-0D-3D) Mixed-Dimensional Multilayer Heterostructures Based High-Performance Broadband Photodetector
  IEEE Transactions on Nanotechnology 2024 DOI: 10.1109/TNANO.2024.3385834
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• Advances in 2D materials based mixed-dimensional heterostructures photodetectors: Present status and challenges
  Materials Science in Semiconductor Processing 2023 DOI: 10.1016/j.mssp.2023.107598
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• Electronic structure and optical properties of GaTe/MoTe2 based vdW heterostructure under mechanical strain and external electric fields
  Materials Science in Semiconductor Processing 2023 DOI: 10.1016/j.mssp.2023.107572
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• First-principal insight of the gold-metal interaction to bilayer MoSe2 of AB and AA stacking order
  Solid State Communications 2022 DOI: 10.1016/j.ssc.2021.114613
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• Strain-dependent doping behavior of WSe2 monolayer: A first-principle calculation
  Europhysics Letters 2022 DOI: 10.1209/0295-5075/ac4d0c
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• Reduced Dark Current With a Specific Detectivity Advantage in Extended Threshold Wavelength Infrared Detector
  IEEE Sensors Letters 2019 DOI: 10.1109/LSENS.2019.2915016
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• Accuracy of activation energy from Arrhenius plots and temperature-dependent internal photoemission spectroscopy
  Infrared Physics and Technology 2019 DOI: 10.1016/j.infrared.2019.103026
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