0000-0002-0713-711X Employment
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Publications (115)
- Identification of Surface, Interface, and Bulk States on the Pristine and Passivated InP (001) and (111) Surfaces Using Surface Photovoltage Spectroscopy Save
- Investigations on the effect of arsenic and phosphorus atomic exchange on the origin of crystal potential fluctuations in InAsP/InP epilayers Save
- Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors Save
- Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001) Save
- Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs Save
- Ultranarrow Band UV Detection in GaN with Simple Device Architecture Save
- Effect of germanium auto-diffusion on the bond lengths of Ga and P atoms in GaP/Ge (111) investigated by using X-ray absorption spectroscopy Save
- Elucidating the interfacial nucleation of higher-index defect facets in technologically important GaP/Si (0 0 1) by azimuthal angle-resolved polarized Raman spectroscopy Save
- Photovoltaic Response and Charge Redistribution Processes in GaAs/AlGaAs Multiple‐Quantum Wells Structure Save
- Anisotropic magnetic properties of excitons in GaAs multiple quantum wells Save