Pradeep Kumar

About

Dr. Pradeep Kumar is working as Associate Professor at the School of Physical Sciences, Indian Institute of Technology Mandi, India. Before that, he did his master’s degree from JNU Delhi and Ph.D. from IISc Bangalore, India. His current research interest is on Quantum and 2D materials.

Employment

• Indian Institute of Technology Mandi Associate Professor
  2021 - Present
• Indian Institute of Technology Mandi Assistant Professor
  2014 - 2021
• Indian Institute of Science Graduate Research Assistant
  2007 - 2014

Education

• Indian Institute of Science Ph.D. in Physics
  2007 - 2014
• Jawaharlal Nehru University M.Sc. in Physics
  2005 - 2007
• Hansraj College, University of Delhi B.Sc. (Physics Hons.)
  2002 - 2005

Projects & Funding

Projects & funding information is unavailable.

Publications (95)

• Coupled phonons–crystal field excitations and phonon anomalies in the triangular dipolar magnet Ba3Yb(BO3)3
  Physical Review B 2026 DOI: 10.1103/j4l8-7z6h
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• Raman spectroscopic studies of anisotropic triangular lattice system YbMgGaO4
  Physical Review Materials 2026 DOI: 10.1103/npnx-fk6q
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• Synergistic Ti3C2T x MXene–VS2 nanocomposite electrode for ultrasensitive electrochemical detection of lead ions
  Nanotechnology 2026 DOI: 10.1088/1361-6528/ae490d
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• Hysteretic Phonons and Quasielastic Response: A Raman Study of Thermal Memory in Two-Dimensional CuCrP2S6
  ACS Applied Optical Materials 2026 DOI: 10.1021/acsaom.5c00460
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• Universal Ohmic contacts to β -Ga2O3 using interfacial dipoles of ultra-thin MgF2 layer and related defect passivation
  Applied Physics Letters 2026 DOI: 10.1063/5.0308375
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• Exciton Dynamics, Fano Quantum Interference and d–d Excitation in the Single Crystal of Two‐Dimensional Antiferromagnetic Fe2P2S6
  physica status solidi (RRL) – Rapid Research Letters 2026 DOI: 10.1002/pssr.202500291
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• Antipolar and short- and long-range magnetic ordering in quasi-two-dimensional AgCrP2S6
  Journal of Materials Chemistry C 2026 DOI: 10.1039/D5TC03093E
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• Radiation-Induced Charge Trapping Effect in BST/AlGaN/GaN Transistor: Gamma-Ray Dosimeter
  ACS Applied Electronic Materials 2026 DOI: 10.1021/acsaelm.6c01298
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• Ohmic contact to Schottky conversion for mitigating the oxygen defects present at the Ni/MgO–Ga2O3 interface
  Journal of Physics D: Applied Physics 2025 DOI: 10.1088/1361-6463/adf233
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• Tunable resonant Raman scattering with temperature in vertically aligned 2H-SnS2
  Nanoscale 2025 DOI: 10.1039/D5NR01717C
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