Mousam charan Sahu

About

I am a Postdoctoral scientist at the University of Complutense Madrid, Spain. My research interest is focused on emerging devices based on novel metal oxides and 2D monolayer chalcogenides for memory and Neuromorphic computing applications. I have adequate expertise in material synthesis, characterization, device fabrication and characterization. Specifically, I have expertise in two-terminal/ three-terminal device physics, transport measurement in the presence of low/high temperature, pressure and light, and ballistic transport in mesoscopic systems. Apart from experimental skills, I also have hands-on experience in artificial neural network (ANN) simulation and theoretical investigation using the first principle density functional theory (DFT). I also have experience in mentoring and training the Pre- PhD and project students. I have also been involved in writing research proposals for travel grants, beamline experiments, and research funding.
I am a highly motivated and hardworking person eager to pursue experimental research supported by theoretical modelling in advanced materials and emerging devices. I am an independent thinker with an analytical mind and can work in a group as well as independently to achieve the goals and objectives of the organization/project. I am enthusiastic about developing my skills further and taking on new responsibilities to expand my research skills and knowledge.

Employment

• Universidade Complutense de Madrid Postdoctoral scientist
  2024 - Present

Education

• Institute of Physics Bhubaneswar PhD
  2018 - 2024

Projects & Funding

Projects & funding information is unavailable.

Publications (16)

• Pulse Tunable Quantum Conductance States in Oxygen Vacancy Engineered TiO2−Δx Memristor for Artificial Neural Network Applications
  ACS Applied Electronic Materials 2025 DOI: 10.1021/acsaelm.5c00694
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• Analog‐Digital Hybridity of Resistive Switching in Ion‐Irradiated BiFeO3 Memristor for Synergistic Neuromorphic Functionality and Artificial Learning
  Advanced Materials Technologies 2025 DOI: 10.1002/admt.202400557
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• Direct Transfer of Monolayer MoS2 Device Arrays for Potential Applications in Flexible Electronics
  ACS Applied Nano Materials 2024 DOI: 10.1021/acsanm.3c05400
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• Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c06336
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• Reconfigurable Low-Power TiO2 Memristor for Integration of Artificial Synapse and Nociceptor
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c02727
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• High Responsivity in Monolayer MoS2 Photodetector via Controlled Interfacial Carrier Trapping
  ACS Applied Electronic Materials 2023 DOI: 10.1021/acsaelm.2c01567
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• Bipolar Resistive Switching in TiO2 Artificial Synapse Mimicking Pavlov’s Associative Learning
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.2c17228
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• Multifunctional 2D MoS2 Optoelectronic Artificial Synapse with Integrated Arithmetic and Reconfigurable Logic Operations for In‐Memory Neuromorphic Computing Applications
  Advanced Materials Technologies 2023 DOI: 10.1002/admt.202201125
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• Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer $$WS_2$$
  Scientific Reports 2022 DOI: 10.1038/s41598-022-06346-w
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• Transition metal substituted MoS2/WS2 van der Waals heterostructure for realization of dilute magnetic semiconductors
  Journal of Magnetism and Magnetic Materials 2022 DOI: 10.1016/j.jmmm.2022.169567
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