KHUSHWANT SEHRA

About

Khushwant Sehra received the B. Tech. Degree in Electronics, from University of Delhi, New Delhi, India, and the M. Tech Degree in Electronics and Communication Engineering, from University School of Information, Communication & Technology, Guru Gobind Singh Indraprastha University, New Delhi, India, in 2017 and 2019, respectively. He is presently working as a Research Scholar in the Department of Electronic Science, University of Delhi, New Delhi, India. His research interest includes modeling, simulation and fabrication of GaN based HEMT devices.

Employment

• University of Delhi Assistant Professor
  2023 - Present
• Deen Dayal Upadhyaya College, University of Delhi Junior Research Fellow [DRDO - SSPL Sponsored CARS Project]
  2023 - 2023
• University of Delhi Research Scholar [DRDO - SSPL Sponsored CARS Project]
  2019 - 2021

Education

• UNIVERSITY OF DELHI & SSPL,DRDO Research Scholar
  2019 - Present
• GURU GOBIND SINGH INDRAPRASTHA UNIVERSITY M. TECH ELECTRONICS AND COMMUNICATION
  2017 - 2019
• DEEN DAYAL UPADHYAYA COLLEGE, UNIVERSITY OF DELHI B. TECH IN ELECTRONIC SCIENCE
  2013 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (55)

• Impact of γ-Ray Irradiation on Π-Shaped Gate AlGaN/GaN HEMTs
  2026 DOI: 10.1007/978-981-92-0217-1_54
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• On the Efficacy of SG, DG, and GP - MOSFET Architectures for Space Application
  2026 DOI: 10.1007/978-981-92-0217-1_29
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• On the Inherent ESD Reliability of the Single Gate, Double Gate, and Ground Plane MOSFETs
  2026 DOI: 10.1007/978-981-92-0217-1_31
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• On the Reliability of Ferroelectric Field-Effect Transistor Under Heavy-Ion Particle Strike
  2026 DOI: 10.1007/978-981-92-0217-1_17
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• Comparative Study of Machine Learning Models for Predicting Electrical Characteristics in Double-Gate MOSFETs
  2026 DOI: 10.1007/978-981-92-0217-1_18
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• γ-Ray Induced Effects on COTS E-Mode p-GaN AlGaN/GaN HEMTs
  2025 DOI: 10.1007/978-981-96-3758-4_11
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• Reliability Analysis of GaN-Based n-Channel HEMT with p-GaN/AlGaN/GaN Epitaxial Stack Under Heavy Ion Particle Strikes
  2025 DOI: 10.1007/978-981-96-3758-4_15
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• Impact of Angled Heavy Ion Particle Strike on GaN-Based P-Channel FETs for Space Applications
  2025 DOI: 10.1007/978-981-96-3758-4_14
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• On the reliability of HfO2-based FeFETs for memory applications
  Microsystem Technologies 2025 DOI: 10.1007/s00542-025-05919-9
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• An improved multifunction network using two current feedback operational amplifiers
  AEU - International Journal of Electronics and Communications 2025 DOI: 10.1016/j.aeue.2025.156047
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