0000-0002-1417-9596 Employment
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Publications (10)
- Precisely defect-engineered WSe2 nanosheets enable enhanced surface reactivity and charge transfer for robust, humidity-tolerant, and fast room-temperature NO2 sensing Save
- Controlled p-type doping in (111)NiO epitaxial films through ions irradiation Save
- Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC Save
- Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering Save
- Disorder-induced crossover of Mott insulator to weak Anderson localized regime in an argon-irradiated NdNiO3 film Save
- 100 Mev Ag and 25 Kev He Induced Defects in 4H-SiC Save
- Recovery of ion-damaged 4H-SiC under thermal and ion beam-induced ultrafast thermal spike-assisted annealing Save
- Controlled generation of photoemissive defects in 4H-SiC using swift heavy ion irradiation Save
- 300 keV Ar ion induced effects in GaAs and 4H-SiC Save
- Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC Save