Hemanjaneyulu Kuruva

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Publications (5)

• Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering
  IEEE Journal of the Electron Devices Society 2024 DOI: 10.1109/JEDS.2023.3345020
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• Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs
  IEEE Electron Device Letters 2022 DOI: 10.1109/LED.2022.3149410
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• Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3152459
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• Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD–Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2019.2958338
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• MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2019.2916716
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