Udayan Ganguly

About

Udayan Ganguly received the B.Tech. degree in Metallurgical Engineering from the IIT Madras, in 2000 and the M.S. and Ph.D. degrees in Materials Science and Engineering at Cornell University, Ithaca, NY, in 2005 and 2006 respectively. In 2006, after a short Postdoctoral Scholarship position at NASA Ames Research, Udayan joined Applied Materials to serve as the technical lead for Flash Memory Applications Development at Applied Materials’ Front End Product Division, Sunnyvale, CA. He has joined Dept. of Electrical Engineering in 2010. His research interests are in semiconductor device physics and processing technologies for advanced memory, computing, and neuromorphic systems.

Employment

• Indian Institute of Technology Bombay Associate Professor
  2010 - Present
• Applied Materials Inc Member of Technical Staff
  2006 - 2010
• NASA Ames Research Center
  2006 - 2006

Education

• Cornell University Ph.D.
  2000 - 2006
• Indian Institute of Technology Madras Bachelor of Technology
  1996 - 2000

Projects & Funding

Projects & funding information is unavailable.

Publications (146)

• High Remnant Polarization (2Pr > 65 μ C/cm2) in Sputtered HfxZr1- xOy Thin Films
  IEEE Electron Device Letters 2025 DOI: 10.1109/LED.2025.3615202
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• Design Space and Variability Analysis of SOI MOSFET for Ultralow-Power Band-to-Band Tunneling Neurons
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2024.3507758
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• Heracles: A HfO2 Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3615577
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• One-Time Programmable Memory for Ultra-Low Power ANN Inference Accelerator With Security Against Thermal Fault Injection
  IEEE Journal of the Electron Devices Society 2025 DOI: 10.1109/JEDS.2024.3508759
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• Low Voltage NIPIN Symmetric and Bi-Directional Diode for System Level ESD Protection
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3477747
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• Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3469177
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• Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application
  Thin Solid Films 2024 DOI: 10.1016/j.tsf.2024.140529
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• Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3331660
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• A 42.3 μm² Band to Band Tunneling-Based Oscillator Enabled Temperature to Digital Converter With Resolution FoM of 0.16 pJK² for Embedded Temperature Sensing
  IEEE Solid-State Circuits Letters 2024 DOI: 10.1109/LSSC.2024.3433610
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• FeFET-Based MirrorBit Cell for High-Density NVM Storage
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3361843
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